Shear Stress Sensors

This invention relates to hot film shear stress sensors and their fabrication. We describe a hot film shear stress sensor comprising a silicon substrate supporting a membrane having a cavity underneath, said membrane bearing a film of metal and having electrical contacts for heating said film, and wherein said membrane comprises a silicon oxide membrane, where in said metal comprises aluminium or tungsten, and wherein said membrane has a protective layer of a silicon-based material over said film of metal. In preferred embodiments the sensor is fabricated by a CMOS process and the metal comprises aluminium or tungsten.

Attached files:
US 20100242592.jpg

Patents:
US 20,100,242,592

Inventor(s): HANEEF IBRAHEEM [PK]; HODSON HOWARD P [GB]; MILLER ROBERT [GB]; UDREA FLORIN [GB]

Type of Offer: Sale



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