Low-temperature Pulsed Dc Reactive Sputtering Deposition of Thin Films from Metal Targets
This invention discloses a method for depositing ZnO films or other metal oxide films by a reactive pulse DC sputtering from metal target in a gas mixture containing oxygen. The substrate can be set at any temperature from above room temperature (20 DEG C), while the resulted ZnO films are transparent.
Attached files:Patents:WO 2,010,051,282
Inventor(s):
FAN QI HUA [US]; ZHANG SHIBIN [US]; DENG XUNMING [US]
Type of Offer:
Sale
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