Surface Preparation for Thin Film Growth by Enhanced Nucleation

Various processes and related systems are provided for making structures on substrate surfaces. Disclosed are methods of making a structure supported by a substrate by providing a substrate having a receiving surface and exposing at least a portion of the receiving surface to output from a remote plasma of an inert gas. The remote plasma has an energy low enough to substantially avoid etching or sputtering of the receiving surface but sufficient to generate a treated receiving surface. The treated surface is contacted with a deposition gas, thereby making the structure supported by the substrate.

Attached files:


Patents:
US 20,100,048,029

Inventor(s): KUMAR NAVNEET [US]; YANGUAS-GIL ANGEL [US]; GIROLAMI GREGORY S [US]; ABELSON JOHN R [US]

Type of Offer: Licensing



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