Titanium Dioxide Thin Film Systems and Method of Making Same
A method for producing a thin film titanium dioxide is disclosed. The disclosed method for producing the thin film titanium dioxide includes performing a magnetron reactive sputtering process to vaporize at least portions of a titanium source in a sputtering chamber that is supplied with gaseous oxygen. The vaporized titanium reacts with the oxygen to form anatase titanium dioxide, which is deposited on a substrate within the sputtering chamber.
Attached files:Patents:US 20,100,043,881
Inventor(s):
IBRAHIM ALHOMOUDI IBRAHIM ABDULLAH [US]; NEWAZ GOLAM [US]; AUNER GREGORY W [US]
Type of Offer:
Licensing
« More Metallurgy Patents