Transparent Nanowire Transistors and Methods for Fabricating Same
Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
Attached files:Patents:WO 2,009,038,606
Inventor(s):
MARKS TOBIN J [US]; JANES DAVID B [US]; JU SANGHYUN [US]; YE PEIDE [US]; ZHOU CHONGWU [US]; FACCHETTI ANTONIO [US]
Type of Offer:
Licensing
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