Monolithically Integrated Antenna- and Receiver Circuit for the Detection of Terahertz Waves
The present invention relates to a device for detection of millimeter waves with at least one field effect transistor having a source, a drain, a gate, a gate-source contact, a source-drain channel and a gate-drain contact.Compared with such a device, the present invention is based, among other things, the task of providing a device which makes it possible to provide a field-effect transistor for detection of performance and / or the phase of electromagnetic radiation in the THz frequency range.
To create such a device, it is proposed according to the invention to provide a device that has an antenna structure, wherein the field effect transistor is connected to the antenna structure so that a signal received from the antenna structure, electro-magnetic signal in the THz frequency range via the gate-source contact in the field-effect transistor is fed and positioned with the field-effect transistor and the antenna structure together on a single substrate.
OEJEFORS ERIK [DE]; HARING BOLIVAR PETER [DE]; ROSKOS HARTMUT [DE]; PFEIFFER ULLRICH [DE]
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