Cobalt tungsten phosphorous electroless deposition process and materials

The Invention The new technology of electroless cobalt has lower resistance and enhanced electromigration resistance compared to alternative barriers that are used today. Therefore, for deep submicron technology, the new technology yields better global interconnect delay and improved reliability.

Furthermore, it is well conformed to the use since the deposition is a surface reaction which is limited due to the high diffusion of the species material in the liquid phase.

With respect to dimensions, since this barrier film is very thin (50-100 Å) it improves device density by increasing the coupling capacity between lines allowing for the creation of danced chips.

The Need In integrated circuit (IC) manufacturing, copper based interconnects technology faces few problems such as metal corrosion, weak adhesion, high chemical reactivity, copper surface electromigration, corrosion (mainly post CMP) and considerable transport of copper in common ILD materials. The application of thin barrier and capping layers for copper interconnects technology solves those problems: The barrier layer is connected in parallel to the interconnect line and occupies volume that would otherwise be used for signal conduction by the copper. Therefore, the barrier should be as thin as possible without affecting its integrity.
Commercial Applications Chips for the micro/nano electromechanical systems (MEMS) industry
Implementation The technological implementation is based on the production of a system specially designed for the electroless process.
§ N. Petrov,Y. Sverdlov and Y. Shacham-Diamand, “Electrochemical Study of the Electroless Deposition of Co(P) and Co(W, P) Alloys”, Journal of The Electrochemical Society, 149 (4), 2002, pp. c187-c194.

§ Yosi Shacham-Diamand, Y. Sverdlov, and N. Petrov, “Electroless Deposition of Thin-Film Cobalt-Tungsten-Phosphorus Layers Using Tungsten Phosphoric Acid (H3 [P(W3 O10 )4 ]) for ULSI and MEMS Applications”, Journal of The Electrochemical Society, 148 (3), 2001, pp. c162-c167.
Patent Pending Tech Transfer Officer Mr. Larry Loev Office: +972-3-6406544 Fax: +972-3-6406675 Mail: [email protected]

Inventor(s): Yosi Shacham

Type of Offer: Licensing

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