Thermodynamically Stable Contacts for Binary Semiconductors

The Invention This invention provides thermodynamically stable electrical contacts for wide band gap binary semiconductors, as well as stable contacts with Ohmic or rectifying properties. This new technology enables the creation of a stable metal contact for semiconductor devices operating at high temperatures (400°C-600°C). These contacts are crucial to the automotive industry.
The Technological Innovation The new technology makes use of a bi-layer metallic contact composed of a reactive refractory transition metal element (column 4b in the periodic table) and near-noble metal (group 8 in the periodic table). The refractory metal forms a compound with the less metallic element of the substrate and forms a diffusion barrier layer that inhibits diffusion. The near-noble-metal bonds with the more metallic element of the substrate, forming a separate phase. This phase is thermodynamically stable with both the substrate and the adjacent diffusion barrier layer, thus establishing thermodynamic equilibrium.

This solves the current problem typical of silicon carbides, wherein the numerous production phases may affect the electrical characteristics of the contact. The new technology is thermodynamically stable and less affected by temperature, power level, frequency and radiation.


Commercial Applications
§ The automotive industry requires high-speed, high-power electronic circuits in a hot environment, where the existing silicon circuits are inoperable. Thermodynamically stable contacts will enhance the performance of the relevant devices.

§ The ULSI industry requires high temperature performance to overcome problems of insufficient heat removal from extremely dense ULSI circuits.
Patent Pending: I, granted: US
Tech Transfer Officer Mr. Larry Loev Office: +972-3-6406544 Fax: +972-3-6406675 Mail: [email protected]

Inventor(s): Yoram Shapira

Type of Offer: Licensing



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