Arrays of Semimetallic Bismuth Nanowires and Fabrication Techniques Therefor

In the present invention, nanowires are fabricated by electrodeposition using semi-metallic bismuth. In this novel form of nanowire, positive magnetoresistance (MR) as high as 300% at low temperatures and 70% at room temperature, with a quasi-linear field dependence has been achieved. The MR effect in these semi-metallic nanostructures not only has much larger magnitude than, but also is characteristically different from, the negative GMR previously obtained in metallic nanostructures. Description (Set) Proposed Use (Set) This invention takes advantage of the electronic properties of semi-metallic Bi which are fundamentally different from those of common metals.

Patent (Set) 6,187,165

US 6,187,165

Inventor(s): Chien, Chia-Ling

Type of Offer: Licensing

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