Quantum Dot Fabrication Process

DESCRIPTION: Quantum dots possess unique properties that could potentially revolutionize existing optical and electronic technologies as well as open up new technologies. Conventional quantum dot fabrication techniques, however, have several drawbacks, such as large recombination velocities and surface depletion, that arise from having the surface exposed while patterning the substrate before or after growth.

Researchers at the University of California have developed a quantum dot fabrication process that does not require any processing steps either before or after growth and so avoids typical problems such as surfaces, dislocations, and surface states. This process produces uniformly sized quantum dots in single or multiple layers out of any semiconductor, metal, or oxide material system that allows consecutive epitaxy and has lattice mismatch.

APPLICATIONS: The reliable production of quantum dots offers outstanding opportunities for optical and electronic technologies as well as the development of new technologies. Devices that use the unique properties and advantages of quantum dots, such as improved vertical cavity surface emitting lasers and individual electron counters, thus become feasible.

ADVANTAGES:

* No processing steps before or after growth required
* Easily integrated into existing epitaxial growth processes (e.g. molecular beam epitaxy, chemical vapor deposition, vapor phase deposition, etc.)
* Produces extremely small (<300 Angstrom laterally), uniformly sized quantum dots in single or multiple layers that are free of defects and interface states
* Tunable quantum dot size
* Extensible to many semiconductor, metal, or oxide material systems

REFERENCE: 1993-358

Patents:
US 5,614,435   [MORE INFO]

Type of Offer: Licensing



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