Quantum well structure

A quantum well structure according to the invention includes a quantum well layer ( 107 ) arranged between two barrier layers ( 109, 112 ). It is distinguished in that at least one of the barrier layers ( 109 ) includes nanostructures ( 110 ) which compensate or modulate a lateral homogeneity of the barrier layer ( 109 ), that exists without the nanostructures ( 110 ), that is to say a homogeneity in the directions extending perpendicularly to the stacking direction of the layers in the quantum well structure.

Attached files:
2006274803.jpg

Patents:
US 20,060,274,803

Inventor(s): MASSELINK WILLIAM T [DE]; SEMTSIV MYKHAYLO P [DE]

Type of Offer: Sale



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