Fabrication of porogen residue free and mechanically robust low-k materials

A method is disclosed to produce a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa. The method starts with depositing a SiCOH film using Plasma Enhanced Chemical Vapour Deposition (PE-CVD) or Chemical Vapour Deposition (CVD) onto a substrate and then first Performing an atomic hydrogen treatment at elevated wafer temperature in the range of 200 DEG C up to 350 DEG C to remove all the porogens and then performing a UV assisted thermal curing step.

Attached files:
EP 2272996.jpg

Patents:
EP 2,272,996

Inventor(s): URBANOWICZ ADAM [BE]; VERDONCK PATRICK [BE]; SHAMIRYAN DENIS [BE]; VANSTREELS KRIS [BE]; BAKLANOV MIKHAIL [BE]; DE GENDT STEFAN

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