A System for Producing Patterned Silicon Carbide Structures

The invention is directed to methods of forming ceramic pattern structures of silicon carbide film. In one method, an electron-beam resist or a photo-resist is deposited onto a substrate. A portion of the resist is selectively removed from the substrate to form a resist pattern on the substrate. A film of pre-ceramic polymer that includes silicon and carbon is deposited onto the substrate and resist pattern and the pre-ceramic polymer film is cured. A portion of the cured pre-ceramic polymer film on the resist pattern is removed, thereby forming a pre-ceramic polymer pattern on the substrate. Finally, the pre-ceramic polymer pattern is converted to a ceramic pattern. In another method, a mold comprising cavities having the shape of a desired structure is prepared and placed against a surface of a substrate on which the desired structure is to be formed. A pre-ceramic polymer is introduced into the mold and then cured, and the mold is removed from the substrate, thereby forming a pre-ceramic polymer pattern on the substrate. Finally, the pre-ceramic polymer pattern is converted to a ceramic pattern.

Patents:
WO 2,011,068,884

Inventor(s): THERRIEN JOEL M [US]; SCHMIDT DANIEL F [US]

Type of Offer: Sale



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