Manufacturing semiconductor device for use as gas sensor, photo-detector, photo cell, solar cell, diode or light emitting diode, involves forming seed layer on nano-wire layer by using solution in pre

Semiconductor device manufacturing involves forming seed layer on nano-wire layer by using a solution at 30, preferably 100, particularly 200[deg] C in a pressure tank at a pressure of 14.5 bars. An independent claim is also included for a semiconductor device, which comprises a p-type zinc oxide nano-wire layer and an n-type zinc oxide nano-wire layer, which are electrically connected.

Attached files:


Patents:
DE 102,009,030,476

Inventor(s): VOS TOBIAS [DE]; DEV APURBA [DE]; RICHTERS JAN-PETER [DE]

Type of Offer: Sale



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