Type Ii Quantum Dot Solar Cells
A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type Il band alignment. A method for fabricating such a device is also provided.
FORREST STEPHEN R [US]; WEI GUADAN [US]; SHIU KUEN-TING [US]
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