High-performance Gate Oxides Such As for Graphene Field-effect Transistors Or Carbon Nanotubes
An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices.
MERIC INANC [US]; SHEPARD KENNETH [US]; TREMBLAY NOAH J [US]; KIM PHILIP [US]; NUCKOLLS COLIN P [US]
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