Hybrid Plasma-semiconductor Optoelectronic Devices and Transistors

The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.

Attached files:


Patents:
US 20,110,037,102

Inventor(s): TCHERTCHIAN PAUL A [US]; WAGNER CLARK J [US]; EDEN J GARY [US]

Type of Offer: Licensing



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