Production of PT/PZT/PLZT Thin Films, Powders, and Laser 'Direct Write' Patterns

Abstract
This invention encompasses methods and reagents for making PT, PZT, and PLZT as well as their extrinsic ions doped powders and thin films. In particular, the invention includes methods for localized laser annealing of PT, PZT, PLZT films to the surface of materials to provide articles useful in electronic devices such as high value capacitors, optical switches, wave guides, and the like. The solution acetate technique is easy, fast, and well-controlled stoichiometry compositions of nano-powders and nano-grain thin films for electronics and catalyst industries.

Potential commercial uses and users:
Electronic and semiconductor catalyst industries, electro-optical devices such as: optical switches, special light modulators, optical disks, monolithic photo microactuators, ferro-electric random access memories, optical neural networks and displays.

Advantages:
The present invention offers advantages in processing techniques for ferroelectric thin films and nano-material as follows: (a) the formulated precursor solutions are stable with no gelation or precipitation for several months; (b) the aqueous acetate process is a non-moisture-sensitive alternative to sol-gel techniques; (c) crystalline perovskites are formed at a relatively low temperature and free of organic impurities. Results indicate that PT, PZT, and PLZT crystallize at 450 degrees C, 500 degrees C and 500 degrees C, respectively. These temperatures are preferable for device fabrication; (d) the acetate/micellar process offers greater control over surfactant concentration and a better metals/organics ratio in the dried film; and (e) the acetate process uses an aqueous solution; the acetate, acetylacetonate, or carbonate salts of various metal ions can easily be added to the solution to prepare doped PT/PZT/PLZT perovskites.

Patents:
US 5,348,775   [MORE INFO]

Inventor(s): C.T. Lin

Type of Offer: Licensing



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