Photovoltaic Devices Comprising Zinc Stannate Buffer Layer and Method for Making
A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.
Patents:US 6,169,246 [
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Inventor(s):
Xuanzhi Wu; Peter Sheldon; Timothy J. Coutts
Type of Offer:
Licensing
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