Quantum cascade laser structure

An inventive quantum cascade laser structure comprises a number cascades (100), each comprising a number of alternately arranged quantum well layers (110a-110j) and barrier layers (105-105J). Both the material at least one quantum well layer (110a-110j) and the material at least one barrier layer (105-105J) is under mechanical stress, which may be the appropriate voltage, a train or compressive stress. The quantum well layers (110a-110j) and barrier layers (105-105J) are in the novel quantum cascade laser structure to one another such that existing tensions compensate within a cascade (100) largely;. In the novel quantum cascade Laser structure, the material of the quantum well layers (110a-110j), only one material component and the material at least one of the barrier layers (105d, 105e, 105f) at least two material components (111a, 111b, 112a, 112b, 113a, 113b) on.

Patents:
DE 102,004,009,531

Inventor(s): DRESSLER SEBASTIAN [DE]; MASSELINK WILLIAM TED [DE]; SEMTSIV MYKHAYLO PETROVYCH [DE]; GEORGIEV NIKOLAI [DE]; HELM MANFRED [DE];

Type of Offer: Sale



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