Direct-bandgap Nano-crystalline Optoelectronic Devices

A photovoltaic device is provided comprising a thin-film of an energy conversion material. The energy conversion material includes one or more quantum structures, where the quantum structures comprise a semiconductor material having an indirect band-gap in the bulk. The average size of the quantum structures is selected such that a direct and an indirect band-gaps are modified in the semiconductor material such that the direct band-gap provides charge carrier generation when the quantum structures are exposed to light.

Attached files:


Patents:
WO 2,010,057,994

Inventor(s): TIMMERMAN DOLF [NL]; GREGORKIEWICZ TOMASZ [NL]; DE BOER WIETEKE DINY ANTONIUS MARIA [NL]

Type of Offer: Sale



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