Epitaxial Methods and Templates Grown By the Methods
This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention can be applied to a wide range of elemental and compound semiconductor materials.
ARENA CHANTAL [US]; WERKHOVEN CHRISTIAAN J [US]; BERTRAM RONALD THOMAS JR [US]; LINDOW ED [US]; MAHAJAN SUBHASH [US]; DATTA RANJ
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